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Analytical, scaleable large signal noise model for GaAs and InP MMIC applications

Analytisches und skalierbares Gross-Signal- und Hochfrequenz-Rauschmodell für Mikrowellenschaltungen basierend auf den Materialsystem GaAs und InP

: Reuter, R.; Leven, A.

DOI: 10.1109/EUMA.1999.338448

	Microwave Engineering Europe: 29th European Microwave Conference 1999. Conference proceedings. Vol.2 London: Miller Freeman, 1999 ISBN: 0-86213-152-9 pp.213-216 : Ill., Lit.
	European Microwave Conference (EuMC) <29, 1999, München> European Microwave Week (MIOP) <1999, München>

	English
	Conference Paper
	Fraunhofer IAF ()
	GaAs; HEMT; high-frequency; Hochfrequenz; InP; modeling; Modellierung; noise; Rauschen

Abstract
In this paper an analytical large signal noise model for GaAs- and InP-based HFETs is presented. The capability of the model is verified by the comparison of measured and simulated bias dependence of the high frequency noise behaviour of various III/V-devices. Furthermore, the model extraction procedure and the implementation into a commercial microwave design system is shown. The use for MMIC applications is demonstrated by the comparison of measured and simulated noise properties of a single stage optoelectronic receiver for 10 GHz.