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Analytical, scaleable large signal noise model for GaAs and InP MMIC applications
Analytisches und skalierbares Gross-Signal- und Hochfrequenz-Rauschmodell für Mikrowellenschaltungen basierend auf den Materialsystem GaAs und InP
In this paper an analytical large signal noise model for GaAs- and InP-based HFETs is presented. The capability of the model is verified by the comparison of measured and simulated bias dependence of the high frequency noise behaviour of various III/V-devices. Furthermore, the model extraction procedure and the implementation into a commercial microwave design system is shown. The use for MMIC applications is demonstrated by the comparison of measured and simulated noise properties of a single stage optoelectronic receiver for 10 GHz.