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Analytical, scaleable large signal noise model for GaAs and InP MMIC applications

Analytisches und skalierbares Gross-Signal- und Hochfrequenz-Rauschmodell für Mikrowellenschaltungen basierend auf den Materialsystem GaAs und InP
 
: Reuter, R.; Leven, A.

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Microwave Engineering Europe:
29th European Microwave Conference 1999. Conference proceedings. Vol.2
London: Miller Freeman, 1999
ISBN: 0-86213-152-9
pp.213-216 : Ill., Lit.
European Microwave Conference (EuMC) <29, 1999, München>
European Microwave Week (MIOP) <1999, München>
English
Conference Paper
Fraunhofer IAF ()
GaAs; HEMT; high-frequency; Hochfrequenz; InP; modeling; Modellierung; noise; Rauschen

Abstract
In this paper an analytical large signal noise model for GaAs- and InP-based HFETs is presented. The capability of the model is verified by the comparison of measured and simulated bias dependence of the high frequency noise behaviour of various III/V-devices. Furthermore, the model extraction procedure and the implementation into a commercial microwave design system is shown. The use for MMIC applications is demonstrated by the comparison of measured and simulated noise properties of a single stage optoelectronic receiver for 10 GHz.

: http://publica.fraunhofer.de/documents/PX-3879.html