Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Analytical charge conservative large signal model for MODFETs validated up to mm-wave range

Analytisches HEMT-Großsignalmodell für MODFETs mit Gültigkeit bis in den Millimeterwellenbereich


Meixner, R.; Cruz, J.J. ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium Digest 1998. Vol.2
Piscataway, NJ: IEEE, 1998
ISBN: 0-7803-4471-5
pp.595-598 : Ill.
International Microwave Symposium <1998, Baltimore/Md.>
Conference Paper
Fraunhofer IAF ()
analytical HEMT large signal model; analytisches HEMT Großsignalmodell; charge conservation; Ladungserhaltung

We present an analytical charge conservative large signal model for MODFETs, which is valid up to mm-wave frequencies. Although the model equations are simple, an excellent accuracy in the representation of the nonlinear elements of the FET is achieved. The model was used for the successful design of a 2-stage power amplifier for 60 GHz.