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  4. Verfahren und Vorrichtung zur Erzeugung hochangeregter Plasmen mittels gepulster Funkenentladung
 
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Patent
Title

Verfahren und Vorrichtung zur Erzeugung hochangeregter Plasmen mittels gepulster Funkenentladung

Other Title
Generation of a high power plasma for production of thin dielectric layers - has a tube of silicon dioxide with cathode and anode system within oxygen atmosphere with controlled pressure.
Abstract
The device has a dielectric tube of silicon dioxide with a wall thickness of 2 mm, a length of 7 cm and an inner diameter of 7 mm. Into one end is set a cathode [1] that is made of metal, semiconductor material or carbon. An anode [3] is set at the other end and the separating distance is 8 cm. The anode may also be fabricated from metal, semiconductor material or carbon. A capacitor is discharged to trigger the plasma in the tube. The anode side is within an oxygen filled space that contains a substrate of silicon [6] and an extraction grating [5]. The dielectric material may be aluminium oxide. USE - For production of thin dielectric sheets such as ceramic materials. ADVANTAGE - Ensures pulsed discharge on dispensing target.
Inventor(s)
Schultrich, B.
Lenk, A.
Witke, T.
Link to Espacenet
http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&locale=en_EP&FT=D&CC=DE&NR=19727882A
Patent Number
1996-19629054
Publication Date
1998
Language
German
Fraunhofer-Institut für Werkstoff- und Strahltechnik IWS  
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