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Variations of the confining potential of doped AlGaAs/GaAs Quantum Wells with the photon energy of excitation.

Variation des einschließenden Potentials von dotierten AlGaAs/GaAs Quantum Wells in Abhängigkeit von der anregenden Photonenenergie
 

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Superlattices and Microstructures 9 (1991), No.4, pp.453-456 : Abb.,Lit.
ISSN: 0749-6036
English
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; optical property; optische Eigenschaft; Quanten-Topf; quantum wells

Abstract
A series of doped GaAs/AlGaAs single quantum well samples has been investigated using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The samples are of 100 A well width and are doped in the central 50 A with Si in the range 5 x 10 high 8 to 2 x 10 high 12 cm high -2. A strong dependence of the optical spectra on the photon energy of excitation is observed. This dependence is interpreted in terms of a charge transfer process between the AlGaAs barrier and the quantum well (QW), which determines the charge and potential distribution in the QW.

: http://publica.fraunhofer.de/documents/PX-38184.html