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  4. Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots
 
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1991
Journal Article
Title

Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots

Other Title
Variation der Materialparameter von LEC Gallium-Arsenid Kristallen entlang der Wachstumsrichtung
Abstract
The variation of material properties along the growth axis of single crystal LEC GaAs ingots is studied. Parameters investigated include concentration and lateral variation of EL2, photoluminescence intensity, resistivity, the concentration of extrinsic shallow acceptors and, after test implantation, the sheet resistivity. Correlations between the observed trends are identified and discussed in terms of compensation and segregation. In general, a very satisfactory homogeneity is found. Remaining variations are identified and evaluated with respect to their device-relevant consequences.
Author(s)
Stibal, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Jantz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Windscheif, J.
Journal
Applied surface science  
DOI
10.1016/0169-4332(91)90222-6
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • absorption topography

  • Absorptionstopographie

  • carbon concentration

  • GaAs

  • Kohlenstoffkonzentration

  • photoluminescence topography

  • Photolumineszenztopographie

  • resistivity

  • spezifischer Widerstand

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