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Vacancy-assisted oxygen precipitation phenomena in Si

Vakanzenbeschleunigte Sauerstoffpräzipitation in Si
 
: Falster, R.; Pagani, M.; Gambaro, D.; Cornara, M.; Olmo, M.; Ferrero, G.; Pichler, P.; Jacob, M.

Diffusion and defect Data. B, Solid State Phenomena 57/58 (1997), pp.129-136
ISSN: 1012-0394
ISSN: 0377-6883
English
Journal Article
Fraunhofer IIS B ( IISB) ()
Gitterleerstellen; nitridation; Punktdefekte; Sauerstoffpräzipitation; silicium

Abstract
The influence of vacancy concentration on oxygen nucleation/precipitation kinetics in CZ silicon has been studied. Vacancies have been injected into the wafer bulk by thermal nitridation of the surface. This treatment causes oxygen precipitation enhancement. Vacancy-.rich material is also characterized by a significant formation of oxygen precipitates at low temperatures, even in material in which the as-grown oxygen precipitates have been suppressed. Finally, experimental evidence is presented that vacancies are consumed during the nucleation process.

: http://publica.fraunhofer.de/documents/PX-38148.html