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Ultrafast hole-lattice thermalization in GaAs quantum wells

Ultraschnelle Löcher-Gitter-Thermalisierung in GaAs Quantum Wells
: Hunsche, S.; Kim, A.M.T.; Dekorsy, T.; Kurz, H.; Köhler, K.

Scheffler, M.; Zimmermann, R.:
23rd International Conference on the Physics of Semiconductors 1996. Vol. 1
Singapore: World Scientific, 1996
ISBN: 981-02-2777-9
ISBN: 981-02-2945-3
pp.749-752 : Ill.
International Conference on the Physics of Semiconductors <23, 1996, Berlin>
Conference Paper
Fraunhofer IAF ()
heterostructure; Heterostruktur; III-V Halbleiter; III-V semiconductors; time resolved measurement; zeitaufgelöste Messung

We study the thermalisation of optically excited cold holes in GaAs quantum wells using time-resolved femtosecond pump-probe measurements. After optical excitation at the lowest heavy-hole transition, hole-lattice thermalisation via LO-phonon absorption is associated with inter-valence band scattering into the lowest light-hole subband. The temperature dependence of the inter-valence band scattering rate indicates a linear dependence on the LO-phonon occupation number and is in good agreement with theory.