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  4. Ultrafast electron dynamics at semiconductor surfaces and interfaces studied with subpicosecond laser photoemission.
 
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1992
Journal Article
Title

Ultrafast electron dynamics at semiconductor surfaces and interfaces studied with subpicosecond laser photoemission.

Other Title
Ultraschnelle Elektronen-Dynamik an Halbleiter-Oberflächen und -Grenzflächen, untersucht mit Subpicosekunden-Laser-Photo-Emissionsspektroskopie
Abstract
The technique of subpicosecond angle-resolved laser photoemission spectroscopy is described. Investigations of the dynamics of electrons excited into normally unoccupied states at the cleaved GaAs (110) 1 x 1 and Ge (111) 2 x 1 surfaces are detailed. In addition, we discuss experiments carried out on heterostructures formed by the growth of Ge on the cleaved GaAs (110) surface as well as the molecular beam epitaxy (MBE) surfaces of GaAs (100) and (111).
Author(s)
Haight, R.
Baeumler, Martina  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Silberman, J.A.
Kirchner, P.D.
Journal
Surface and Interface Analysis  
DOI
10.1002/sia.740190157
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • germanium

  • Halbleiter

  • Oberfläche

  • photoemission

  • Photoemissionsspektroskopie

  • semiconductor

  • surface

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