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Ultrafast electron dynamics at semiconductor surfaces and interfaces studied with subpicosecond laser photoemission.

Ultraschnelle Elektronen-Dynamik an Halbleiter-Oberflächen und -Grenzflächen, untersucht mit Subpicosekunden-Laser-Photo-Emissionsspektroskopie
: Haight, R.; Baeumler, M.; Silberman, J.A.; Kirchner, P.D.


Surface and Interface Analysis 19 (1992), pp.301-308 : Abb.,Lit.
ISSN: 0142-2421
Journal Article
Fraunhofer IAF ()
GaAs; germanium; Halbleiter; Oberfläche; photoemission; Photoemissionsspektroskopie; semiconductor; surface

The technique of subpicosecond angle-resolved laser photoemission spectroscopy is described. Investigations of the dynamics of electrons excited into normally unoccupied states at the cleaved GaAs (110) 1 x 1 and Ge (111) 2 x 1 surfaces are detailed. In addition, we discuss experiments carried out on heterostructures formed by the growth of Ge on the cleaved GaAs (110) surface as well as the molecular beam epitaxy (MBE) surfaces of GaAs (100) and (111).