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Ultrafast dephasing in GaAs and GaAs/AlGaAs quantum wells

Ultraschneller Phasenverlust in GaAs und GaAs/AlGaAs-Quantentöpfen
 

Jiang, P.:
21th International Conference on the Physics of Semiconductors 1991
Singapore: World Scientific, 1992
ISBN: 981-02-1156-2
pp.983-986
International Conference on the Physics of Semiconductors <21, 1992, Beijing>
English
Conference Paper
Fraunhofer IAF ()
Halbleiter; photoluminescence; Photolumineszenz; semiconductor

Abstract
We study the dephasing of excitions and free carriers in GaAs bulk and quantum well samples. The nonlinear response is dominated by the excitionic transitions, which have a room temperature dephasing time Tsub2 of about 250fs. The dephasing time of free carriers is much shorter than our time resolution (100fs).

: http://publica.fraunhofer.de/documents/PX-37324.html