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Ultra flat P-N junctions formed by solid source laser doping


E-MRS Spring Meeting 1990. Proceedings
European Materials Research Society (Spring Meeting) <1990, Strasbourg>
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
diffusion; doping; Dotierung; flach; flat; Halbleiter; laser; Oberfläche; p-n junction; p-n Übergang; pn-junction; pn-Übergang; semiconductor; shallow; silicate glass; silicon; Silizium; surface

A CO2 high-power laser was used for laser-driven boron and phosphorus diffusion from silicate glass layers. Flat profiles were obtained in a depth less than 0.1 mym by a concentration of about 10 high 19 ccm. For analytics mainly were used SIMS, SEM and spreading resistance method.