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1987
Journal Article
Titel
Two-dimensional simulation of integrated detectors and electron devices
Abstract
Numerical tools have been used for the development and improvement of processes and devices for integrated circuits for a long time. As analytical approximations are too uncertain, device engineers have made extensive use of numerical methods. There are two kinds of problems involved in this area of research: the simulation of the fabrication process (programs SUPREM, COMPOSITE etc.) and the simulation of the electrical behaviour of the device (FIELDAY, MINIMOS etc.). Due to the commercial character of these programs they often make severe restrictions on the class of devices to be simulated. In this paper it is shown how arbitrary devices can be simulated and how special problems arising from the size of integrated detectors and from the voltages applied can be overcome. The paper covers the theory and some numerical details. Results will be presented elsewhere. (IMS)