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Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing.

Tunneln in Halbleiter-Heterostrukturen untersucht mittels Subpikosekunden Vierwellenmischen
 

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Applied Physics Letters 56 (1990), No.20, pp.2031-2033 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article
Fraunhofer IAF ()
coupled quantum wells; gekoppelte Quantum Wells; III-V Halbleiter; III-V semiconductors; quantum wells; time-resolved photoluminescence; tunneln; tunnelung; zeitaufgelöste Photolumineszenz

Abstract
We apply time-resolved four-wave mixing as novel tool to study resonant tunneling of carriers in semiconductor heterostructures. The polarization decay of excitons in a quantum well is much faster when the alignment of the electron levels in adjacent wells leads to resonant tunneling and subsequent scattering of the carriers.

: http://publica.fraunhofer.de/documents/PX-37139.html