Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Titanium monophosphide (TiP) layers as potential diffusion barriers

: Leutenecker, R.; Fröschle, B.; Ramm, P.

Societe Francaise du Vide -SFV-, Paris:
MAM '97. Abstracts booklet
Paris, 1997 (Le vide 283)
pp.124 : Lit.
European Workshop on Materials for Advanced Metallization (MAM) <2, 1997, Villard de Lans>
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
annealing; chemical vapour deposition; diffusion barriers; integrated circuit metallisation; integrated circuit testing; rapid thermal processing

Summary form only given. Usually, diffusion barrier layers are fabricated of titanium nitride, deposited either by sputtering or by CVD. We developed a rapid thermal-CVD process with the classical precursor combination TiCl4/NH3 for temperatures