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  4. Time-resolved study of intervalence band thermalization in a GaAs quantum well
 
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1996
Journal Article
Title

Time-resolved study of intervalence band thermalization in a GaAs quantum well

Other Title
Zeitaufgelöste Untersuchungen von Intervalenzband Thermalisierungen in einem GaAs quantumwell
Abstract
The thermalization of optically excited cold holes in a GaAs quantum well is investigated by femtosecond two-color pump-probe measurements. Clear evidence is found for scattering from heavy-holes into the lowest light-hole band due to LO-phonon absorption. We obtain firm data on scattering times which depend strongly on lattice temperature. They vary from 230 fs at room temperature to 900 fs at T equal 05 K. The experimental data are well reproduced by numerical calculation.
Author(s)
Kim, A.M.T.
Hunsche, S.
Dekorsy, T.
Kurz, H.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Applied Physics Letters  
DOI
10.1063/1.116367
Additional full text version
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Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • heterostructure

  • Heterostruktur

  • III-V Halbleiter

  • III-V semiconductors

  • quantum wells

  • time resolved measurement

  • zeitaufgelöste Messung

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