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Time-resolved optical investigation of tunneling of carriers through single AlxGa1-xAs barriers

Zeitaufgelöste optische Untersuchungen des Ladungsträgertunnelns durch einzelne AlxGa1-xAs-Barrieren


Physica scripta 39 (1991), pp.278-282 : Abb.,Lit.
ISSN: 0031-8949
ISSN: 0281-1847
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; Quantentrog; quantum wells; time resolved photoluminescence; zeitaufgelöste Photolumineszenz

An asymmetric double quantum well structure consisting of a wide and a narrow quantum well separated by AlsubxGasub1minusxAs barriers of various thicknesses is used to investigate resonant and nonresonant tunneling of electrons as well as holes through a single barrier. The carrier transfer times are obtained by tracing the luminescence decay of the two quantum wells with picosecond time resolution as a function of an applied electric field. For the first time, resonant and nonresonant electron and hole tunneling times in one single structure are reported. Our results are compared with those of other groups. Idealized theoretical models cannot explain the experimental values.