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Time-dependent Hall effect analysis method used for investigation of the DX center in AlGaAs-Si.

Zeitabhängige Halleffekt Analysenmethode zur Untersuchung der DX-Zentren in AlGaAs-Si
: Brunthaler, G.; Stöger, G.; Aumayr, A.; Köhler, K.


Applied Physics Letters 62 (1993), No.14, pp.1635-1637 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
electrical property; elektrische Eigenschaft

A new time-dependent Hall effect analysis method is demonstrated on the DX center in AlGaAs:Si. Due to the time dependence of the carrier concentration and the mobility in the metastable temperature region of the DX center, errors are usually made in a standard estimation of the Hall effect values. By using an interpolation method for the individual measured voltages, we are able to omit these errors and also to explain them by a linear error approximation. We present mobility data and show that correlation effects between DX centers are important.