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Thin-film In-doped V-catalysed SnO2 gas sensors.

Indium-dotierte Zinndioxid-Dünnschicht-Gassensoren mit Vanadium-Katalysator


Sensors and Actuators. B 9 (1992), pp.215-219 : Abb.,Lit.
ISSN: 0925-4005
Journal Article
Fraunhofer IPM ()
Dünnschicht; gas sensor; gassensor; implantation; indium dopant; Indium-Dotierung; p-Dotierung; p-type doped; thin films; tin dioxide; vanadium catalyst; Vanadium-Katalysator; Zinndioxid

Thin-film In-doped V-catalysed SnO2 gas sensors are discussed and compared with Pt-catalysed In-doped or undoped SnO2 gas sensors. The In acceptors are implanted, while the catalysts are directly evaporated onto the active sensor layer. The V/In catalyst/dopant combination leads to thin-film sensors highly sensitive to NO2, while nearly no cross sensitivity to CO, CO2, H2 and CH4 is detectable. The maximum conductivity change of the V-catalyst In-doped SnO2 sensor in NO2-enriched synthetic air occurs at about 200 degree C.