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Thick polycrystalline silicon for surface micromechanical applications - deposition, structuring and mechanical characterization

 

Foundation for Sensor and Actuator Technology, Stockholm:
8th International Conference on Solid-State Sensors and Actuators 1995 and Eurosensors IX. Digest of technical papers. Vol. 1. Sessions A1-PD6. Papers No. 1-231
Stockholm: Congrex, 1995
ISBN: 91-630-3473-5
pp.202-205
International Conference on Solid-State Sensors and Actuators <8, 1995, Stockholm>
Eurosensors <9, 1995, Stockholm>
English
Conference Paper
Fraunhofer ISIT ()

Abstract
Polysilicon films were deposited in an epitaxial batch reactor. The deposition rate is in the order of 0.5 mu m/min which makes a layer thickness of 10 mu m or more possible. These films were deposited on a sacrificial oxide with a thin LPCVD polysilicon nucleation layer on top. For the lithography a wafer stepper was used. The dry etching of the polysilicon was performed by applying hardmask technology. The values for the residual stress, stress gradient and fracture strength make this material highly suitable for surface micromachining applications.

: http://publica.fraunhofer.de/documents/PX-36493.html