Options
1996
Conference Paper
Titel
Thick polycrystalline silicon for surface micromechanical applications - deposition, structuring and mechanical characterization
Abstract
Polysilicon films are deposited in an epitaxial batch reactor. The deposition rate is of the order of 0.5 mu m min-1, which makes a layer thickness of 10 mu m or more possible. These films are deposited on a sacrificial oxide with a thin LPCVD polysilicon nucleation layer on top. A wafer stepper is used for the lithography. The dry etching of the polysilicon is performed by applying hard mask technology. The values for the residual stress, stress gradient and fracture strength make this material highly suitable for surface-micromachining applications.