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1995
Conference Paper
Titel
A thermoelectric infrared radiation sensor with monolithically integrated amplifier stage and temperature sensor
Abstract
We report on a monolithic integrated infrared sensor system consisting of a thermopile, a sensor measuring the chip temperature and an amplifier stage fabricated in a CMOS process on SIMOX (Separation by IMplanted OXygen) wafers. A responsivity of 209 V/W and a normalized detectivity D* of 1.3EXP8 cmúHz«/W were found for thermopiles with single crystalline p-Si/n-Polysilicon thermocouples on silicon oxide/silicon nitride membranes. A first analysis of the thermal influence of the power consumed by the circuitry on the thermopile voltage indicates, that the sensor performance is not deteriorated by the integrated electronic circuitry.
Language
English