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Temperature measurement at RTP facilities. An overview

 
: Wagner, J.; Böbel, F.G.

Fiory, A.; Roozeboom, F.; Gelpey, J.C.; Öztürk, M.; Thakur, R.P.S.:
Rapid thermal and integrated processing V. MRS Spring Meeting 1996. Proceedings
Pittsburgh: MRS, 1996 (Materials Research Society symposia proceedings 429)
ISBN: 1-558-99332-0
pp.237
Materials Research Society (Spring Meeting) <1996, San Francisco/Calif.>
English
Conference Paper
Fraunhofer IIS A ( IIS) ()
film thickness; Halbleiterfertigungsgerät; in situ process control; in-situ-Prozeßkontrolle; measurement; pyrometric interferometry; pyrometrische Interferometrie; Schichtdickenmessung; semiconductor measurement system; temperature measurement; Temperaturmessung

Abstract
Temperature is one of the most important quantities in semiconductor manufacturing. It plays an important role in many standard production techniques and especially at RTP facilities. We will give an overview on standard temperature measurement techniques at RTP. Their basic prinicples, advantages and disadvantages will be discussed with respect to explicit applications. The potential physical and technical possibilities of optical temperature measurement are outlined as well as the problems like scattering, emissivity change and irradiation by halogen lamps. A complete overview on practical solutions of these problems is given together with explicit examples for applications including experimental setups, necessary electronics and materials.

: http://publica.fraunhofer.de/documents/PX-36151.html