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Temperature-induced spin reversal in n-GaAs.

Temperaturinduzierte Spinumkehr in n-GaAs
 
: Batke, E.; Bollweg, K.; Merkt, U.; Ganser, P.; Köhler, K.

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Solid State Communications 83 (1992), No.6, pp.451-455 : Abb.,Lit.
ISSN: 0038-1098
English
Journal Article
Fraunhofer IAF ()
Bulk-Eigenschaft; bulk property; GaAs; III-V Halbleiter; III-V semiconductors; Magnetfeldeinfluß; magnetic field influence

Abstract
Free and bound electrons in bulk GaAs are investigated by cyclotron resonance in the freeze out regime at temperatures below 40 K. A temperature-induced reversal of the relative intensities of the spin split free electron transition 0 to 1 is observed, providing strong evidence for a spin reversal at a temperature of about 25 K. In contrast, no spin reversal is found for the single electron transition 1s to 2psubplus1 of the shallow donors.

: http://publica.fraunhofer.de/documents/PX-36149.html