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  4. Temperature-dependent cyclotron resonances in n-type GaAs
 
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1993
Journal Article
Title

Temperature-dependent cyclotron resonances in n-type GaAs

Other Title
Temperaturabhängige Zyklotronresonanzen in n-Typ GaAs
Abstract
We report temperature-dependent cyclotron resonances of electrons in bulk GaAs in a temperature regime from about 10-300 K. Due to the nonparabolicity of the GaAs conduction band at sufficiently high temperatures and magnetic-field strengths, several individual Landau transitions are observed. A single line of strongly overlapping Landau transitions is found at higher temperatures and also in the case of small magnetic- field strength. Band coupling, electron-phonon interaction, and the electron spin influence the cyclotron resonance. However, from liquid-helium temperatures up to room temperature, the transition energies are essentially independent of temperature. Scattering times, which govern the broadening of the Landau transitions, decrease in magnitude with increasing magnetic-field strength as well as with temperature, and there is no simple relation to magnetotransport scattering times.
Author(s)
Batke, E.
Bollweg, K.
Merkt, U.
Hu, C.M.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ganser, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physical Review. B  
DOI
10.1103/PhysRevB.48.8761
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • cyclotron measurement

  • doped GaAs

  • dotiertes GaAs

  • III-V Halbleiter

  • III-V semiconductors

  • Zyklotronmessung

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