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1990
Journal Article
Titel
Temperature dependence of persistent photo-conductivity due to DX centers in AlxGa1-xAs-Si.
Alternative
Temperaturabhängigkeit der persistenten Photoleitung aufgrund von DX-Zentren im AlxGa1-xAs-Si
Abstract
Conductivity and Hall effect measurements were performed on molecular beam epitaxy grown Al sub x Ga sub 1-x As:Si samples, which show a large persistent photoconductivity effect. We observe one, two, and three minima in the temperature-dependent carrier concentration during the heating process after having first illuminated the samples (x=0.25, 0.30, and 0.37, respectively) at low temperature. We interpret this structure in terms of the existence of different types of large lattice relaxation DX centers.