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Temperature behaviour of CMOS devices built on SIMOX substrates

: Zimmermann, W.; Belz, J.; Burbach, G.; Vogt, H.

	ESSDERC '90. 20th European Solid State Device Research Conference. Proceedings Bristol: Hilger, 1990 ISBN: 0-7503-0065-5 pp.449-452
	European Solid State Device Research Conference <20, 1990, Nottingham>

	English
	Conference Paper
	Fraunhofer IMS ()
	Device-Charakteristik; Hochtemperaturanwendung; SOI

Abstract
CMOS devices have been built on SIMOX substrates. The device characteristics are examined in the temperature range from room temperature up to 300 C. The degradation of the threshold voltage and the carrier mobility are comparable for bulk- and SOI-devices, but at 300 C the off-state currents of the SOI-devices are three orders of magnitude less than those of bulk counterparts. The capability of SOI-devices for high temperature applications will be shown.