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Technology for VLSI devices on ion implanted buried silicon nitride

Parallelausgabe: Publications 1985. IMS-Duisburg.
 
: Vogt, H.; Zimmer, G.

2nd International Workshop on Future Electron Devices - SOI Technology and 3D Integration
o.S., 1985
International Workshop on Future Electron Devices - SOI Technology and 3D Integration <2, 1985, Shuzenji>
English
Conference Paper
Fraunhofer IMS ()

Abstract
A CMOS technology on implanted buried silicon nitride suitable for high density circuits is presented. Physical and electrical properties of the generated layers, their interfaces and fabricated devices are discussed. (IMS)

: http://publica.fraunhofer.de/documents/PX-35978.html