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Tapered InGaAs/GaAs MWQ lasers with carbon modulation-doping and reduced filamentation

Trapez InGaAs/GaAs MQW Laser mit Kohlenstoff Modulationsdotierung und geringer Filamentierung
: Ralston, J.D.; Laughton, F.R.; Chazan, P.; Larkins, E.C.; Maier, M.; Abd Rahman, M.K.; White, I.H.


Electronics Letters 31 (1995), No.8, pp.651-653
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
gallium arsenide; Halbleiterlaser; modulation doping; Modulationsdotierung; quantum well lasers; semiconductor doping

Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structure containing undoped active regions.