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AlGaInP/GaInAs/GaAs MODFET devices with self-aligned p+ -GaAs gate structure.

AlGaInP/GaInAs/GaAs MODFET-Bauelemente mit selbstjustiertem p+ -GaAs-Gate
 
: Pletschen, W.; Bachem, K.H.; Tasker, P.J.; Winkler, K.

Gumbs, G. ; Materials Research Society -MRS-:
Growth, processing and characterization of semiconductor heterostructures
Pittsburg, Pa.: MRS, 1994 (Materials Research Society symposia proceedings 326)
ISBN: 1-558-99225-1
pp.329-334
Materials Research Society (Symposium) <1993, Boston/Mass.>
English
Conference Paper
Fraunhofer IAF ()
AlGaInP/GaInAs/GaAs heterostructure; AlGaInP/GaInAs/GaAs Heterostruktur; carbon doping; chemical vapour deposition; Kohlenstoffdotierung; MOCVD; MODFET

Abstract
A self-aligned fabrication scheme of a novel AlGaInP/GaInAs/GaAs-MODFET device has been developed. Two characteristic features have been incorporated in the device structure: An AlGaInP barrier which provides a larger conduction band offset than the commonly used AlGaAs and a highly carbon-doped p-type GaAs gate structure which supports a very simple fabrication scheme. Using 1mym optical lithography we have fabricated first demonstrator devices with a current gain cut-off frequency of 60 GHz and a power gain cut-off frequency of 140 GHz. In addition, the devices show large gate-drain diode breakdown voltages in excess of 30 V and gate currents as low as 50 nA even at gatesource voltages of -5 V.

: http://publica.fraunhofer.de/documents/PX-3564.html