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Surface passivation of high efficiency silicon solar cells

 
: Aberle, A.G.; Warta, W.; Knobloch, J.; Voß, B.

:

Institute of Electrical and Electronics Engineers -IEEE-:
21st IEEE Photovoltaic Specialists Conference '90. Vol.1
New York/N.Y., 1990
ISSN: 0160-8371
pp.233-238
Photovoltaic Specialists Conference <21, 1990, Kissimimee/Fla.>
English
Conference Paper
Fraunhofer ISE ()

Abstract
Theroretically and experimentally determined design guides for reducing significantly recombination at the emitter and rear surfaces of full-area AI-BSF and oxide passivated bifacial cells are given. The impact of emitter thickness and surface dopant concentration on emitter saturation current and solar cell efficiency is outlined. A modified emitter structure (locally deep diffused below the metal contacts) is predicted to have superior performance Measured V"oc"-values reveal the potential of deep emitter cells to achieve efficiencies above 20% in spite of high metallisation factors. Emperimentally we find strong dependence of passivation quality on oxide thickness and base doping concentration. The BSF quality of a diffused aluminum layer decreases strongly with increasing drive-in time. For SiO2-passivated rear surfaces of bifacial cells measurements of the dependence of the surface recombination velocity on the excess concentration are presented.

: http://publica.fraunhofer.de/documents/PX-35422.html