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  4. Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy
 
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1998
Conference Paper
Title

Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy

Other Title
Unterdrückung der Dotierungsverteilung in AlGaAs/GaAs Laser-HEMT-Strukturen für optoelektronische Transmitter hergestellt mittels Molekularstrahl-Epitaxie
Abstract
Detailed studies of segregation and diffusion of the dopants Si and Be in MBE grown AlGaAs/GaAs heterostructures for optoelectronic devices are presented. Segregation of Si could be suppressed by lowering the substrate temperature during the growth of a few monolayers after the deposition of the doped layers. Solubility limits of Be were observed to depend on the Al mole fraction. Be diffusion in the laser structures was negligible at doping concentrations below these solubility limits As an application, transmitter OEICs were fabricated using laser-HEMT structures grown with optimized growth conditions. The devices operated successfully at 15 GBit/s.
Author(s)
Gaymann, A.
Maier, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bronner, Wolfgang  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Grotjahn, F.
Hornung, J.
Ludwig, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE International Symposium on Compound Semiconductors 1997. Proceedings  
Conference
International Symposium on Compound Semiconductors 1997  
DOI
10.1109/ISCS.1998.711540
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • III-V Halbleiter

  • III-V semiconductor

  • integrated circuit

  • integrierter Schaltkreis

  • optical measurement

  • optische Messung

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