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Suppression of dopant redistribution in AlGaAs/GaAs laser-HEMT structures for optoelectronic transmitters grown by molecular beam epitaxy

Unterdrückung der Dotierungsverteilung in AlGaAs/GaAs Laser-HEMT-Strukturen für optoelektronische Transmitter hergestellt mittels Molekularstrahl-Epitaxie

: Gaymann, A.; Maier, M.; Köhler, K.; Bronner, W.; Grotjahn, F.; Hornung, J.; Ludwig, M.

DOI: 10.1109/ISCS.1998.711540

	Melloch, M.; Reed, M.A. ; IEEE Electron Devices Society; IEEE Lasers and Electro-Optics Society: IEEE International Symposium on Compound Semiconductors 1997. Proceedings Bristol: IOP Publishing, 1998 ISBN: 0-7803-3883-9 ISBN: 0-7803-3884-7 pp.41-44 : Ill.
	International Symposium on Compound Semiconductors <24, 1997, San Diego/Calif.>

	English
	Conference Paper
	Fraunhofer IAF ()
	III-V Halbleiter; III-V semiconductor; integrated circuit; integrierter Schaltkreis; optical measurement; optische Messung

Abstract
Detailed studies of segregation and diffusion of the dopants Si and Be in MBE grown AlGaAs/GaAs heterostructures for optoelectronic devices are presented. Segregation of Si could be suppressed by lowering the substrate temperature during the growth of a few monolayers after the deposition of the doped layers. Solubility limits of Be were observed to depend on the Al mole fraction. Be diffusion in the laser structures was negligible at doping concentrations below these solubility limits As an application, transmitter OEICs were fabricated using laser-HEMT structures grown with optimized growth conditions. The devices operated successfully at 15 GBit/s.