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Substrate damage free laser recrystallization of polysilicon

 

E-MRS Spring Meeting 1989. Proceedings
1989
European Materials Research Society (Spring Meeting) <1989, Strasbourg>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; Kristallisation; laser; Polysilizium; SOI; substrate damage; Substratschaden

Abstract
Recrystallization of a polysilicon layer on insulator by means of an Ar laser beam is reported on. Attention is paid to material properties of the upper layer and the substrate. With careful choice of the process parameters, a high-quality upper layer can be obtained, whereas the substrate retains its original quality. Measurements on devices fabricated in both levels support this conclusion.

: http://publica.fraunhofer.de/documents/PX-35300.html