Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Substrate-damage-free laser recrystallization of polycrystalline silicon

 

Materials Science and Engineering (1989), No.4, pp.197-200
ISSN: 0025-5416
English
Journal Article
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; Kristallisation; laser; MOS; polysilicon; Polysilizium; recrystallization; SOI; substrate damage; Substratschaden

Abstract
Recrystallization of a polycrystalline silicon layer on insulator by means of an argon laser beam is reported. Attention is paid to material properties of the upper layer and the substrate. With careful choice of the process parameters, a high quality upper layer can be obtained, whereas the substrate retains its original quality. Measurements on devices fabricated in both levels support this conclusion.

: http://publica.fraunhofer.de/documents/PX-35299.html