Substrate-damage-free laser recrystallization of polycrystalline silicon

Recrystallization of a polycrystalline silicon layer on insulator by means of an argon laser beam is reported. Attention is paid to material properties of the upper layer and the substrate. With careful choice of the process parameters, a high quality upper layer can be obtained, whereas the substrate retains its original quality. Measurements on devices fabricated in both levels support this conclusion.