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1989
Journal Article
Titel
Substrate-damage-free laser recrystallization of polycrystalline silicon
Abstract
Recrystallization of a polycrystalline silicon layer on insulator by means of an argon laser beam is reported. Attention is paid to material properties of the upper layer and the substrate. With careful choice of the process parameters, a high quality upper layer can be obtained, whereas the substrate retains its original quality. Measurements on devices fabricated in both levels support this conclusion.
Language
English