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Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes



Applied Physics Letters 58 (1991), No.13, pp.1410-1412 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
carrier transport; electro-optic sampling; elektrooptische Korrelationsmesstechnik; GaAs; Monte Carlo methods; MSM-Photodiode; photoconductive sampling; photodetector; Photodetektor; Photoleitungs-Korrelationsmesstechnik; Schottkydiode; subpicosecond resolution; Subpikosekunden-Auflösung; Trägertransport

The temporal evolution of the photocurrent in interdigitated GaAs metal-semiconductor-metal Schottky photodiodes is directly measured in the time domain by photoconductive and electro-optic sampling with subpicosecond resolution. Excellent agreement is found between experiment and theoretical data obtained by two-dimensional self-consistent Monte Carlo calculations.