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1991
Journal Article
Titel
Subpicosecond carrier lifetimes in radiation-damaged GaAs.
Alternative
Subpikosekunden-Lebensdauer von Ladungsträgern in strahlengeschädigtem GaAs
Abstract
We investigate the dependence of carrier lifetimes in radiation-damaged GaAs on proton implantation dose by means of time-resolved reflectivity and photoconductivity experiments with subpicosecond resolution. The carrier lifetimes decrease with increasing implantation dose at low implantation levels wheras beyond the "amorphization dose" a saturation at 0.5 ps can be observed due to a saturation of the defect density.
Tags
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carrier lifetimes
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Ladungsträger
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Lebensdauer
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proton implantation
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Protonen-Implantation
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radiation-damaged GaAs
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strahlengeschädigtes GaAs
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subpicosecond resolution
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Subpicosekunden-Auflösung
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time-resolved photoconductivity
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time-resolved reflectivity
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zeitaufgelöste Photoleitfähigkeit
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zeitaufgelöste Reflektivität