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Sub-nanosecond access time 2k sine-cosine ROM in AlGaAs/GaAs/AlGaAs quantum well HEMT technology

2k Sinus-Cosinus-ROM mit Zugriffszeiten im Subnanosekundenbereich in AlGaAs/GaAs/AlGaAs quantum well HEMT Technologie


Electronics Letters 33 (1997), No.5, pp.428-429
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
digital signal synthesis; digitale Signalsynthese; Festwertspeicher; GaAs-Technologie; GaAs technology; HEMT; integrated circuit; integrierter Schaltkreis; read-only-memory

The design and performance of a 2kbit sine-cosine ROM lookup table in 0.3mu m gate length AlGaAs/GaAs/AlGaAs HEMT technology are presented. A maximum clock frequency of 1.3GHZ is achieved resulting in a sub-nanosecond access time. The power consumption at supply voltages of +1.8 and -2V is about 2W.