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  4. Study of the ambipolar carrier expansion in silicon by an optical time-of-flight method
 
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1984
Book Article
Title

Study of the ambipolar carrier expansion in silicon by an optical time-of-flight method

Author(s)
Axmann, A.
Laurich, B.
Forchel, A.
Hillmer, H.
Hoai, T.X.
Mainwork
Proceedings of the International Conference on Luminescence, Madison  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • ambipolare Trägerausbreitung

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