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Studies of heteroepitaxial nucleation and growth of diamond on silicon

: Jiang, X.; Paul, M.; Klages, C.-P.; Jia, C.L.

Ravi, K.V.; Dismukes, J.P. ; Electrochemical Society -ECS-, Electronics Division; Electrochemical Society -ECS-, High Temperature Materials Division; Electrochemical Society -ECS-, Dielectric Science and Technology Division:
Fourth International Symposium on Diamond Materials 1995. Proceedings
Pennington, NJ: ECS, 1995 (Electrochemical Society. Proceedings 95-4)
ISBN: 1-56677-098-X
International Symposium on Diamond Materials <4, 1995, Reno/Nev.>
Electrochemical Society (Meeting) <187, 1995, Reno Nevada>
Conference Paper
Fraunhofer IST ()
beta-SiC; bias-enhanced nucleation; bias-unterstützte Keimbildung; Diamant; diamond; dislocation; Grenzfläche; high resolution electron microscopy; hochauflösende Transmission-Elektronen-Mikroskopie; interface; microwave plasma CVD; Mikrowellen-Plasma-CVD; silicium; silicon; Versetzung

The decisive role of ion bombardment, due to the substrate bias for epitaxial diamond nucleation by microwave plasma chemical vapor deposition (MWCVD), was demonstrated by growth experiments using patterned Si substrates. Interface between the silicon substrate and epitaxially grown diamond crystals was studied by cross-sectional high resolution electron microscopy (XREM), showing a periodic 3-to-2 registry of {111} atom planes on the epitaxial diamond-silicon interface and interface dislocations. A cubic silicon carbide "transition" was found to be unnecessary for the epitaxy. The possibility of depositing diamond on silicon (221) surfaces was demonstrated.