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1994
Conference Paper
Titel
Structure and electrical characteristics of a thin buried oxide containing silicon inclusions
Abstract
This paper deals with the characterization of a thin (100 nm) buried oxide in an SOI structure. Although in principle thin oxide layers without any silicon inclusion could be formed, the buried oxides (BOXes) commonly produced in a single-step implantation (NV-200 implanter) always contain silicon inclusions. These inclusions have a strong influence on the electrical properties of the insulator, at least in reducing its effective thickness. As a consequence, lower breakdown voltages are caused and relatively high tunneling currents flow through the oxide layer. Moreover, relevant pinhole densities are found. A way to study these effects is through the preparation of scaled-area capacitors and the analysis of their current-voltage (I - V) characteristics. This analysis is carried out by plotting the values of maximum tunneling currents, measured just before the breakdown threshold, vs. the related breakdown voltages, keeping the capacitor area as a parameter.