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1996
Conference Paper
Title
Structural characterization of InAs/(GaIn)Sb superlattices for IR optoelectronics
Other Title
Strukturelle Characterisierung von InAs/(GaIn)Sb-Übergittern for Infrarot-Optoelektronik
Abstract
We report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.
Author(s)