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Structural characterization of InAs/(GaIn)Sb superlattices for IR optoelectronics

Strukturelle Characterisierung von InAs/(GaIn)Sb-Übergittern for Infrarot-Optoelektronik

Shul, R.J. ; Materials Research Society -MRS-:
Compound semiconductors electronics and photonics
Pittsburgh, Penn.: MRS, 1996 (Materials Research Society symposia proceedings 421)
ISBN: 1-558-99324-X
pp.39-44 : Ill., Lit.
Materials Research Society (Spring Meeting) <1996, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()
Ellipsometrie; ellipsometry; IR detection; IR-Detektion; Röntgenbeugung; x-ray diffraction

We report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.