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  4. Structural characterization of InAs/(GaIn)Sb superlattices for IR optoelectronics
 
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1996
Conference Paper
Title

Structural characterization of InAs/(GaIn)Sb superlattices for IR optoelectronics

Other Title
Strukturelle Characterisierung von InAs/(GaIn)Sb-Übergittern for Infrarot-Optoelektronik
Abstract
We report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.
Author(s)
Wagner, J.
Schmitz, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fuchs, F.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weimar, U.
Herres, N.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Tränkle, G.
Koidl, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Compound semiconductors electronics and photonics  
Conference
Materials Research Society (Spring Meeting) 1996  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Ellipsometrie

  • ellipsometry

  • IR detection

  • IR-Detektion

  • Röntgenbeugung

  • x-ray diffraction

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