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1990
Journal Article
Titel
Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/Al(x)Ga(1-x)As:Si heterostructures
Alternative
Druckaufspaltung der X-Leitungsband valleys und Löschen der Spin-Valley Wechselwirkung in GaAs/Al(x)Ga(1-x)As:Si Heterostrukturen
Abstract
We report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T sub 2) state of the Si donor associated with the X valleys in indirect-band-gap (x equal or bigger than 0.4) Al sub x Ga sub 1 minus x As:Si layers grown on GaAs. The data confirm definitely that the herteroepitaxial strain splits the three X valleys such that the X sub z valley lies above the X sub x and X sub y valleys. An independent-valley model perfectly accounts for the properties of the donor resonance over the full indirect-band-gap range of the alloy without inclusion of the spin-valley interaction. This effect is attributed to small local, random inplane strains which quench the first-order spin-valley splitting.
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