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Strain profiles in phosphorus implanted /100/-silicon
Gitterschädigung in phosphorimplantiertem Silizium
Ion implantation induced strain in silicon was measured by high resolution X-ray diffractometry. [l00] oriented Si wafers were implanted with 80 keV P ions at doses below and above the amorphization threshold. After implantation, an annealing step at temperatures between 650 deg. C and 1100 deg. C was applied and anodic oxidation was used for step by step removal of the upper sample layers. The measured rocking curves were compared with numeric simulations. The samples amorphized before annealing had a strained layer with a larger total thickness of implantation induced strain than non-amorphized samples. Strain profiles of annealed