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Statistical characterization of GaAs E/D HEMT analog components for data conversion ICs

	European Gallium Arsenide and Related III-V Compounds Applications Symposium 1994. Proceedings Torino, 1994 pp.169-172
	European Gallium Arsenide and Related III-V Compounds Application Symposium <1994, Torino> Gallium Arsenide Application Symposium <1994, Torino>

	English
	Conference Paper
	Fraunhofer IIS A ( IIS) ()
	HEMT; high electron mobility transistor; Monte-Carlo simulation; parameter extraction; Parameterextraktion

Abstract
Based on the Raytheon model, GaAs E/D HEMT model parameters are measured and their statistical deviations and correlation coefficients are determined. Output current deviations of transistor current sources and DC offset voltages of differential amplifiers, which represent basic limitations of precise data conversion ICs, are characterized using these experimental data and derived equations with seven model parameters. Monte-carlo simulations are carried out on an 8 bit D/A converter and a latched comparator, which were implemented in 0.5 µm GaAs E/D HEMT technology, and simulated results are shown to be identical to measured accuracies of these two circuits.

: http://publica.fraunhofer.de/documents/PX-34740.html