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STACHMOS - a basic 3-dimensional CMOS process

 
: Haberger, K.; Panish, P.; Buchner, R.; Seegebrecht, P.

Soncini, G.:
Solid State Devices. Proceedings of the 17. European Solid State Device Research Conference, ESSDERC '87 : Bologna, Italy, 14-17 September 1987
Amsterdam: North-Holland, 1988
ISBN: 0-444-70477-9
pp.571-574
European Solid State Device Research Conference (ESSDERC) <17, 1987, Bologna>
English
Conference Paper
Fraunhofer IFT; 2000 dem IZM eingegliedert
3D-Integration; CMOS Prozeß; Laserkristallisation; MOS Transistor; Poly-Silizium

Abstract
MOS Transistors have been fabricated in two independent active device layers, the second of which has been formed through laser recrystallization of a thin polysilicon layer. The effect of the fabrication process on the devices in the silicon substrate has been investigated and characterized through electrical measurements. (IFT)

: http://publica.fraunhofer.de/documents/PX-34580.html