• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. STACHMOS - a basic 3-dimensional CMOS process
 
  • Details
  • Full
Options
1988
Conference Paper
Title

STACHMOS - a basic 3-dimensional CMOS process

Abstract
MOS Transistors have been fabricated in two independent active device layers, the second of which has been formed through laser recrystallization of a thin polysilicon layer. The effect of the fabrication process on the devices in the silicon substrate has been investigated and characterized through electrical measurements. (IFT)
Author(s)
Haberger, K.
Panish, P.
Buchner, R.
Seegebrecht, P.
Mainwork
Solid State Devices. Proceedings of the 17. European Solid State Device Research Conference, ESSDERC '87  
Conference
European Solid State Device Research Conference (ESSDERC) 1987  
Language
English
IFT  
Keyword(s)
  • 3D-Integration

  • CMOS Prozeß

  • Laserkristallisation

  • MOS Transistor

  • Poly-Silizium

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024