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Stability of an AlGaAs/GaAs/AlGaAsE/D-HEMT process with double pulse doping

Stabilität des AlGaAs/GaAs/AlGaAsE/D-HEMT-Prozesses mit Doppelpulsdotierung

Ikegami, T.; Hasegawa, F.; Takeda, Y.:
Gallium arsenide and related compounds 1992. Proceedings
Bristol: IOP Publishing, 1993
International Symposium on Gallium Arsenide and Related Compounds <19, 1992, Karuizawa>
Conference Paper
Fraunhofer IAF ()
dry etching; e-beam lithography; Elektronenstrahllithographie; Halbleitertechnologie; semiconductor technology; Trockenätzen

The yield of our process sequence for the fabrication of integrated circuits is dominated by the HEMT quality which depends mainly on MBE growth e-beam lithography and dry etching. We report on the fabrication of integrated circuits comprising 20000 HEMTs, gate length Lsubg=0.30 mym with yields of 10 percent.