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Sputter deposition of cubic boron nitride films

 

Feldman, A.; Tzeng, Y.; Yarbrough, W.A.; Yoshikawa, M.; Murakawa, M. ; National Institute of Standards and Technology -NIST-:
ADC '95. Third International Conference on the Applications of Diamond Films and Related Materials. Proceedings
Washington: NIST, 1995 (NIST special publication 885)
ISBN: 1-886843-01-5
pp.831
International Conference on the Applications of Diamond Films and Related Materials <3, 1995, Gaithersburg/Md.>
English
Conference Paper
Fraunhofer IST ()
adhesion; cBN films; film growth; hardness; sputtering

Abstract
Cubic boron nitride (c-BN) films can be prepared by sputter deposition. Targets, mostly hexagonal boron nitride (h-BN) or boron, which have low electrical conductivities, will be used. For the application of effective and reliable d.c. magnetron sputter techniques, conducting target materials are necessary. Boron carbide (B4C) was proven to be a suitable candidate. A d.c. magnetron sputter process was developed in three phases. At first a r.f. diode sputter process was optimized for a h-BN target and transferred to a B4C target, followed by d.c. magnetron sputtering experiments with the boron carbide target. Correlations between process parameters and film properties as well as some structural features of the sputter deposited films will be reported.

: http://publica.fraunhofer.de/documents/PX-34545.html