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  4. AIN properties of various producers
 
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1998
Conference Paper
Title

AIN properties of various producers

Abstract
AlN has many advantageous properties. These concern a high thermal conductivity, a non-toxic nature, a temperature coefficient of expansion (TCE) that closely matches the TCE`s of both silicon and gallium arsenide making AlN useful for direct mounting of large VLSI dies. A constant quality of this ceramic is decisive for a reproducible packaging. Different substrate qualities (as-fired, lapped, polished) of 5 producers were investigated. The substrates distinguish in following: I. the middle size of grains in the AlN-polycrystal (1...11 mu m); II. the substrate roughness (0,2...0,9 mu m); III. the amount of additional phases (Al2Y4O9, AlYO3, Al5Y3O12); IV. the thermal conductivity (100...200 W/mK); V. the bending strength (300...430 MPa).
Author(s)
Otschik, P.
Kretzschmar, C.
Lefrance, G.
Mainwork
43. Internationales Wissenschaftliches Kolloquium 1998. Band 2: Vortragsreihen Mikroelektronische Schaltungen und Systeme, Festkörperelektronik und Sensoren, innovative Werkstoffe und Oberflächentechnik  
Conference
Internationales Wissenschaftliches Kolloquium 1998  
Language
English
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS  
Keyword(s)
  • AlN

  • bending strength

  • Substrates

  • thermal conductivity

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