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Spin flip of excitons in GaAs quantum wells

Spin Flip von Exzitonen in Quantenfilmen
: Snoke, D.W.; Rühle, W.W.; Köhler, K.; Ploog, K.


Physical Review. B 55 (1997), No.20, pp.13789-13794
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Journal Article
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductor; quantum wells; time resolved photoluminescence; zeitaufgelöste Photolumineszenz

We report measurements of the rates of conversion from J = 2 excitons to J = 1 excitons, as well as conversion from right-handed J = 1 excitons to left-handed J = 1 excitons, and measurement of the intrinsic radiative lifetime of J = 1 excitons, in very-high-quality GaAs quantum wells. Since the experiments are performed at very low temperature and with resonant excitation, the effects of energy relaxation are absent.