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  4. Spectral response of CMOS photosensors
 
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1993
Conference Paper
Title

Spectral response of CMOS photosensors

Abstract
We report on CMOS compatible photosensors fabricated with a standard CMOS process. Two different types of diodes, a PMOS-FET and a vertical pnp bipolar transistor were investigated. Absolute sensivities in a spectral range from 400 nm to 900 nm wavelength were compared. Furthermore, the behaviour of a sensor system consisting of a diode, an integrated logarithmic amplifier and a temperature compensation will be reported. By use of an external optical filter a photometric sensor behaviour is measured down to 20 mlx intensity for a sensitive area of 0.34 qmm. This filter is replaced by a deposited thin film stack, working as an integrated interference filter. Fabrication process and experimental results hereon will be presented.
Author(s)
Kalz, A.
Budde, W.
Gottfried-Gottfried, R.
Mainwork
Eurosensors VII. Book of Abstracts  
Conference
Eurosensors 1993  
Language
English
IMS2  
Keyword(s)
  • analoge intergrierte Schaltung

  • CMOS-Technik

  • Optisches Filter

  • photodiode

  • phototransistor

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