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Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs.

Räumliche Verteilung flacher residuärer Akzeptoren in undotiertem semiisolierendem GaAs
: Rothemund, W.; Wagner, J.; Wettling, W.; Windscheif, J.


Journal of applied physics 65 (1989), No.12, pp.5225-5227 : Abb.,Lit.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()
acceptor; räumliche Verteilung; semi-insulating GaAs; simiisolierendes GaAs; spatial distribution

The spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs has been studied quantitatively by electronic Raman scattering with a spatial resolution of nearly 50mym. This acceptor distribution has been correlated with the spatial distribution of the compensating EL2 donor in its neutral charge state measured by near-IR absorption topography. An enhanced acceptor concentration is found in regions which show high-IR absorption: From the comparison with low-temperature cathodoluminescence results, it is found that the intensity of the band-to-acceptor recombination normalized to the band-to-band luminescence intensity reproduces the acceptor distribution measured by Raman scattering. Implications of the present result on the compensation model for undoped semi-insulating GaAs are discussed.