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Some aspects of thick film resist performance and modeling



Conley, W. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Advances in resist technology and processing XV
Bellingham, Wash.: SPIE, 1998 (SPIE Proceedings Series 3333)
ISBN: 0-8194-2778-0
Annual Conference on Advances in Resist Technology and Processing <15, 1998, Santa Clara/Calif.>
Conference Paper
Fraunhofer ISIT ()
development model; modeling; refractive index; simulation; thick film resist

Realistic simulation of DNQ-novolac thick film resist performance requires accurate modeling of a number of steps including light propagation inside the resist and the development process. This paper addresses several advanced topics for the characterization and modeling of thick film resists including exposure induced changes in the resist refractive index and depth dependent development rate functions. Simulations performed using traditional light propagation models such as the scaled-defocus algorithm are compared to the new finite-difference beam-propagation algorithm which can account for exposure induced resist refractive index changes. The impact of depth dependent development rate phenomena will also be discussed. A series of simulated profiles are compared to experimental results for two thick film resist series, AZ AEP4000 and AZ AE9200.